职 称：研究员
研究方向：非线性光学特性及微纳激光器器件
通讯地址：南区科技大厦A305
邮政编码：130022
教育经历
2004.09-2008.07 长春理工大学 学士学位
2009.09-2014.07 吉林大学 博士学位
奖励与荣誉称号
金国藩青年学子奖
科研工作
承担国家自然科学基金、吉林省优秀青年基金等项目。主要研究方向为微纳结构半导体光电子器件。近年来，在《Nanoscale》、《Journal of Materials Chemistry C》、《Applied Physics Letters》、《Optics Express》、《Journal of Luminescence》等国际知名期刊发表SCI论文10篇，EI论文3篇，授权专利2件。
论文专利
发表论文：
论文格式：论文名称、发表日期、刊物名称、刊物类别、分区（无可不填写）、影响因子（无可不填写）
1.Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction. 2018, Nanoscale, , SCI, 一区, 7.5.
2.Ultraviolet-enhanced Electroluminescence from Individual ZnO Microwire/p-Si Light Emitting Diode by Reverse Tunneling Effect. 2017, Journal of Materials Chemistry C, SCI, 一区，5.5.
3.Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO2 barrier layers. 2015, Applied Physics Letters , SCI, 二区，3.5.
4.An Emerging Transparent Conducting Oxides Material: 2-Dimensional Plasmonic Zn doped CuGaO2 Nanoplates for Q-switched Fiber Laser. 2019, Optics Express, SCI, 二区，3.5..
5.Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film. 2014，Journal of Luminescence，SCI, 二区，2.7.
6.Interface State Luminescence and Sub-Bandgap Absorption Based on CuGaO2 Nanoplates/ZnO Nanowires Heterostructure Arrays. 2018, Physica Status Solidi B, SCI, 三区，1.8.
7.Localized Surface Plasmon Resonance Absorption Generating by Free Carriers in Zn-Doping CuGa1-xZnxO2 Nanoplates. 2019, Physica Status Solidi B, SCI, 三区，1.8..
8.Influence of noise mechanism on zero-bias resistance junction-area product in In0.53Ga0.47As photovoltaic infrared detector. 2014， Journal of Optoelectronics And Advanced Materials，SCI，四区.
9.Studying the influence of material parameters on quantum efficiency of In0.53Ga0.47As photovoltaic detector. 2012，Optoelectronics And Advanced Materials-Rapid Communications，SCI，四区.
10.Theoretical analysis the effect of material parameters on detectivity ofIn0.53Ga0.47As photovoltaic detector. 2016，Optoelectronics And Advanced Materials-Rapid Communications， SCI，四区.
11.In0.53Ga0.47As光电探测器量子效率的理论仿真分析，2015, 光学学报，EI.
12.金局域表面等离激元增强砷化镓发光特性，2019，光子学报，EI.
13.金属等离子激元调控Fabry-Perot微腔谐振模式研究, 2019, 中国光学，EI.
1.大功率半导体激光高频调制电路，发明专利，2019，专利号：ZL 2016 1 0077089.0 .
2.一种大功率半导体激光器脉冲驱动电源，实用新型，2016.08，专利号：ZL201620935393.X.